Firstname Lastname

Saravade Vishal

Dr. Vishal Saravade is an educator and researcher in physics, nanotechnology, and microelectronics. His work focuses on applying physics, engineering, and materials science to address challenges in electronics, quantum technologies, energy, sensing, and biomedicine. He is deeply committed to STEM education and workforce development in nanotechnology and microfabrication. He enjoys mentoring students and collaborating with colleagues in fields of nanoengineering. Prior to joining Rose-Hulman Institute of Technology, Dr. Saravade was a lead instructor at the Center for Nanotechnology Education and Utilization at Pennsylvania State University, where he trained veterans and active-duty military members to enter the nanomanufacturing workforce. During his postdoctoral appointment at Purdue University, he contributed to the development of novel nondestructive construction materials sensors. As a postdoc at Kennesaw State University, he helped establish semiconductor labs and equipment. Dr. Saravade has contributed to the exploration of semiconductors for spintronics and energy harvesting, including work during his graduate studies at Missouri University of Science and Technology. Outside the classroom and lab, he enjoys exploring new sports activities and new cities.

Academic Degrees

  • Ph.D. in Electrical Engineering, Missouri University of Science and Technology, 2020
  • B.Tech. in Electronics Engineering, Veermata Jijabai Technological Institute, 2014

Research Interests

  • Investigating innovative materials and devices for applications including electronics, quantum technologies, sensing, energy, and biomedicine
  • STEM education and workforce development in nanotechnology

Teaching Interests

  • Nanotechnology: Safety, Materials, Growth, Characterizations, Applications
  • Microfabrication, Devices, and Measurements
  • Applied and Fundamental Physics
  • Semiconductors and other Novel Materials
  • Entrepreneurship in Nanotechnology

Awards & Honors

  • Nanohub Champions Awardee, by Nanohub-Purdue, 2024
  • Invited Panelist for Ph.D. Career Paths Workshop hosted by the Great Lakes I-Corps Hub, 2024
  • Spotlight Session Organizer and Panelist, “Strategies for Effective Nanotechnology and Microelectronics Education”, ATE-PI Conference 2024
  • Corresponding Editor, Journal of Advanced Technological Education
  • Journal Reviewer in Journal of Electronic Materials, Applied Physics A, Journal of Advanced Technology Education, Materials, Journal of Materials Science
  • Session Organizer, “Involving diverse students including veterans in STEM education and workforce”, HITEC 2024
  • Session Organizer, “Education across diverse student populations in STEM”, ATE-PI Conf. 2023
  • Judge in Symposium of Student Scholars 2022, Kennesaw State University
  • Student Mentor and Judge in Summer Undergraduate Research Fellowship Program 2021, Purdue University
  • Nominee for College of Engineering 2021 Outstanding Postdoc Award, Purdue University
  • Co-Entrepreneurial Lead - NSF I-Corps, Purdue University, 2020

Publications & Presentations

Publications:

  • V. Saravade, A. Ghods, A. Woode, C. Zhou, and I. Ferguson, “Spin mechanisms in Gd-doped GaN implanted with O or C for room temperature spintronic and quantum applications”, IEEE J. Selected Topics in Quantum Electronics, 2025
  • V. Saravade, Z. Gray, R. Lindenberg, and O. Awadelkarim, “Simulation approaches for microelectronics and nanofabrication advanced technology education”, Journal of Advanced Technological Education, 4 (1), 2025
  • S. A. Rahman, M. T. Nafisa, V. Saravade, Z. C. Feng, N. Lu, B. Klein, and I. Ferguson, “Zinc oxide in quantum information science (a short review): from growth techniques to applications”, SPIE Oxide-based Materials and Devices XVI, 13367, p. 134-144, 2025
  • V. Saravade, Z. Feng, M. Nafisa, C. Zhou, N. Lu, B. Klein, and I. Ferguson, “Advances in growth, doping, and devices and applications of zinc oxide”, JVST A 42 (2), 2024
  • Z. Feng, J. Yin, V. Saravade, B. Klein, and I. Ferguson, “Internal atomic distortion and crystalline characteristics of epitaxial SiC thin films studied by short wavelength and synchrotron X-ray diffraction”, in “Handbook of Silicon Carbide Materials and Devices”, Taylor & Francis Group, p. 419, 2023
  • Z. Feng, H. Lin, B. Xin, S. Tsai, V. Saravade, J. Yin, B. Klein, and I. Ferguson, “Structural characteristics of 3C-SiC thin films grown on Si-face and C-face 4H-SiC substrates by high temperature chemical vapor deposition”, Vacuum 207, 111643, 2023
  • Z. Feng, H.Yang, J. Yin, Y. Liu, F. Wu, J. Dai, C. Chen, K. He, L. Wan, V. Saravade, J. Yin, B. Klein, and I. Ferguson, “Crystalline and optical properties of AlN thin films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition”, Thin Solid Films, 780, 139939, 2023
  • V. Saravade, C. Zhou, N. Lu, B. Klein, and I. Ferguson, “Investigation of transition metal-doped zinc oxide for spintronics”, Proc. SPIE, 12002, 12002K-1, 2022
  • V. Saravade, A. Ghods, Z. Manzoor, C. Zhou, N. Lu, B. Klein, and I. Ferguson, “Structural and absorption band edge tunability in ZnMnO by metal-organic chemical vapor deposition and atomic layer deposition”, Proc. SPIE, 12002, 12002H-1, 2022
  • V. Saravade, A. Crawford, J. Williams, C. Zhou, N. Lu, B. Klein, and I. Ferguson, “Effects of gadolinium precursors on the magnetic properties of gadolinium-doped gallium nitride for spintronic applications”, Proc. SPIE, 12009, 12009A-1, 2022
  • H. Lu, L. Wang, Y. Liu, S. Zhang, Y. Yang, V. Saravade, Z. Feng, B. Klein, I. Ferguson, L. Wan, and W. Sun, “A comparative investigation of the optical properties of polar and semipolar GaN epi-films by metalorganic chemical vapor deposition”, Semiconductor Science and Technology 37 (6), 065021, 2022
  • V. Saravade, Z. Manzoor, A. Corda, C. Zhou, I. Ferguson, and N. Lu, “Optical and structural properties of manganese-doped zinc oxide grown by MOCVD”, Advanced Optical Materials, 9 (12), 2170046, 2021
  • J. Chen, J. Wang, V. Saravade, I. Ferguson, W. Hu, Z. Feng, and L. Wan, “A multi-technique investigation of Ni-doped ZnO thin films on sapphire by MOCVD”, Journal of Vacuum Science and Technology A, 39 (2), 023408, 2021
  • V. Saravade, Z. Manzoor, A. Corda, C. Zhou, I. Ferguson, and N. Lu, “Nickel doping in zinc oxide by MOCVD: Structural and optical properties”, SPIE Quantum Sensing Nano Electronics and Photonics XVII, 1288, 2020
  • A. Ghods, V. Saravade, C. Zhou, and I. Ferguson, “Field-effect passivation of metal/n-GaAs schottky solar cells using atomic layer deposited Al2O3/ZnO ultrathin films”, JVST A: Vacuum, Surfaces, and Films, 38 (1), p. 012406, 2020
  • V. Saravade, A. Ghods, A. Woode, C. Zhou, and I. Ferguson, “GaN-based room temperature spintronics for next generation low power consumption electronic devices”, IEEE 16th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT and AI (HONET-ICT), p. 203, 2019
  • A. Ghods, V. Saravade, A. Woode, C. Lerner, C. Zhou, and I. Ferguson, “Floating gate schottky junction solar cells with improved power conversion efficiency”, IEEE J. of Photovolt., 2020
  • Y. Feng, V. Saravade, T. Chung, Y. Dong, H. Zhou, B. Kucukgok, I. Ferguson, and N. Lu, “Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical Properties”, Scientific Reports, 9 (1), p. 1, 2019
  • A. Ghods, V. Saravade, C. Zhou, C. Kim and I. Ferguson, “PEDOT:PSS/n-Si hybrid solar cells with Al2O3 passivation interfacial layer”, IEEE 16th International Conference on Smart Cities: Improving Quality of Life Using ICT & IoT and AI (HONET-ICT) , p. 201, 2019
  • A. Ghods, V. Saravade, A. Woode, C. Zhou, and I. Ferguson, “Design and fabrication of AlGaAs-based 1.8eV schottky solar cells”, 46th IEEE Photovoltaic Specialists Conference, p. 0233, 2019
  • A. Ghods, V. Saravade, A. Woode, C. Zhou, and I. Ferguson, “Effect of gate voltage in performance optimization of GaAs-based schottky junction solar cells”, IEEE 46th Photovoltaic Specialists Conference, p. 1743, 2019
  • V. Saravade, C. Ferguson, A. Ghods, C. Zhou, and I. Ferguson, “Room temperature ferromagnetism in gadolinium-doped gallium nitride”, Materials Research Society (MRS) Advances, 3 (3), p. 159, 2018
  • Y. Wang, C. Zhou, A. Elquist, A. Ghods, V. Saravade, N. Lu, and I. Ferguson, “A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications”, SPIE Oxide-based Materials and Devices IX, 10533, p. 105331R, 2018
  • C. Zhou, A. Ghods, V. Saravade, P. Patel, N. Lu, and I. Ferguson, “The current and emerging applications of the III-nitrides”, Electrochemical Society Journal ofSolid State Science and Technology, 6 (12), Q149, 2017
  • I. Ferguson, K. Yunghans, A. Ghods, V. Saravade, and C. Zhou, “A review of physiological aspects of solid state lighting”, Optical Soc. America, Solid-State Lighting, SW3C-3, 2017
  • C. Zhou, A. Ghods, K. Yunghans, V. Saravade, P. Patel, N. Lu, and I. Ferguson, “ZnO for solar cell and thermoelectric applications”, SPIE Oxide-based Materials and Devices, VIII, 10105, p. 101051K 2017

Presentations:

  • “Nationwide Workforce Development of Veterans in STEM Fields including Microelectronics and Nanomanufacturing”, HITEC Conference, 2025
  • “Insights into Microelectronics and Nanotechnology Education across Diverse Student Populations through a Veterans Program”, NSF ATE-PI Conference, 2023
  • “Using Remotely Accessible Equipment to Prepare for an In-person Lab Experience”, NSF ATE-PI Conference, 2023
  • “Curriculum Developments in Nanotechnology”, HITEC Conference, 2023
  • “III-Nitrides for Room Temperature Spintronics”, OSRAM Seminar Series, 2022 (Invited)
  • “Wide Bandgap Semiconductors for Room Temperature Spintronics and Quantum Information Science”, Workshop on Compound Semiconductors Materials and Devices, 2022 (Invited)
  • “Investigation of transition metal-doped zinc oxide for spintronics”, SPIE Photon., 2022 (Invited)
  • “Structural and absorption band edge tunability in ZnMnO by metal-organic chemical vapor deposition and atomic layer deposition”, SPIE Photonics West, 2022 (Invited)
  • “Effects of gadolinium precursors on the magnetic properties of gadolinium-doped gallium nitride for spintronic applications”, SPIE Photonics West, 2022 (Invited)
  • “Wide Bandgap Semiconductors for Room Temperature Spintronics”, Joint Research Networking Workshop, Kennesaw State University, 2022
  • “Quantum Information at Room Temperature for Better Living”, Nanotechnology for Better Living India, 2021 (Invited)
  • “Gadolinium-doped GaN for Room Temperature Spintronic Applications”, Materials Research Society Symposium, 2018
  • “The Role of Manganese and Silicon Co-doping on the Ferromagnetic and Optical Properties of MOCVD GaN layers for Spintronic Applications”, Materials Research Society Symposium, 2018